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Capacitance–Voltage Characterization of La2O3 Metal–Oxide–Semiconductor Structures on In0.53Ga0.47As Substrate with Different Surface Treatment Methods

H. Iwai, T. Hattori, N. Sugii, 2011 .

Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques

H. Iwai, N. Sugii, A. Nishiyama, 2011 .

Stability and interdiffusion at MOCVD grown ZnSe/GaAs interfaces

I. Suemune, K. Ohmi, M. Yamanishi, 1988 .

Thermal stability of nearly lattice-matched ZnSSe/GaAs interface grown by MOVPE

I. Suemune, M. Yamanishi, Y. Kan, 1988 .

Lattice-Mismatch Enhanced Diffusion at a ZnSe/GaAs Interface - Increase of Thermal Stability in a Lattice-Matching System

I. Suemune, K. Ohmi, M. Yamanishi, 1987 .

Characterization of Nitrogen-Doped ZnSe and ZnS0.06Se0.94 Films Grown by Metal-Organic Vapor-Phase Epitaxy

I. Suemune, H. Masato, M. Yamanishi, 1988 .

PEB sensitivity studies of ArF resist

Munirathna Padmanaban, Woo-Kyu Kim, Takanori Kudo, 2003, SPIE Advanced Lithography.