H. Peng

Effects of a HfMoN Metal Gate and Self-Aligned Fluorine-Ion Implantation on the Negative-Bias Temperature Instability of pMOSFETs With $\hbox{Gd}_{2} \hbox{O}_{3}$ Gate Dielectrics

J. Wang, Chao‐Sung Lai, P. Chou, 2011, IEEE Electron Device Letters.

Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD- Al2O3 Gate Dielectrics by CF4 Plasma Treatment

Chao‐Sung Lai, S. Lin, Chung-Yuan Lee, 2008 .

Fluorine effects on the dipole structures of the Al2O3 thin films and characterization by spectroscopic ellipsometry

C. Ai, Chao‐Sung Lai, S. Lin, 2007 .

Characterizations of HfxMoyNz Alloys as Gate Electrodes for n- and p-Channel Metal Oxide Semiconductor Field Effect Transistors

Chin Wei Huang, Chung-Yuan Lee, Y. Fang, 2008 .