Che-Wei Chen

High On/Off Ratio and Very Low Leakage in p+/n and n+/p Germanium/Silicon Heterojunction Diodes

G. Luo, C. Chien, C. Chung, 2013 .

Ge channel MOSFETs directly on silicon

C. Chien, C. Chung, Che-Wei Chen, 2014, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits.

Epitaxial Germanium on SOI Substrate and Its Application of Fabricating High ${\rm I}_{\rm ON}/{\rm I}_{\rm OFF}$ Ratio Ge FinFETs

G. Luo, C. Chien, C. Kei, 2013, IEEE Transactions on Electron Devices.

Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel

G. Luo, C. Chien, C. Chung, 2014, IEEE Electron Device Letters.

Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) ${\rm p}^{+}/{\rm n}$ and ${\rm n}^{+}/{\rm p}$ Heterojunctions Formed on Si Substrate

Chao-Hsin Chien, G. Luo, C. Chien, 2013, IEEE Transactions on Electron Devices.

First experimental Ge CMOS FinFETs directly on SOI substrate

Chao-Hsin Chien, G. Luo, C. Chien, 2012, 2012 International Electron Devices Meeting.

Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

Yao-Jen Lee, G. Luo, C. Chien, 2016, IEEE Transactions on Electron Devices.