Yong-Taik Kim

STI stress-induced degradation of data retention time in DRAM and a new characterizing method for mechanical stress

S. Cha, Jae-Goan Jeong, Sung-Joo Hong, 2011, 2011 International Reliability Physics Symposium.

Overcoming the reliability limitation in the ultimately scaled DRAM using silicon migration technique by hydrogen annealing

Sungjoo Hong, Seong-Wan Ryu, T. Jang, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Highly productive PCRAM technology platform and full chip operation: Based on 4F2 (84nm pitch) cell scheme for 1 Gb and beyond

K. S. Choi, S. H. Lee, H. C. Park, 2011, 2011 International Electron Devices Meeting.

Highly scalable Z-RAM with remarkably long data retention for DRAM application

Tae-Su Jang, Seung-Chan Moon, Young H. Oh, 2006, 2009 Symposium on VLSI Technology.