A. Kohlhase

发表

Advanced metallization of very-large-scale integration devices

H. Joswig, A. Kohlhase, P. Ku¨cher, 1989 .

Composition of TiN diffusion barriers in contact holes of advanced integrated circuits: a challenge for quantitative Auger spectroscopy

W. Pamler, A. Kohlhase, 1989 .

Performance and failure mechanisms of TiN diffusion barrier layers in submicron devices

W. Pamler, A. Kohlhase, M. Mändl, 1989 .

Selective germanium epitaxial growth on silicon using CVD technology with ultra-pure gases

Junichi Murota, Armin Kohlhase, J. Murota, 1990 .

Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing

J. Murota, N. Mikoshiba, Shin-ichi Kobayashi, 1989 .

Selective CVD of germanium on silicon and its applications

J. Murota, N. Mikoshiba, S. Kobayashi, 1991 .

Scaling down and reliability problems of gigabit CMOS circuits

Wolfgang Krautschneider, Hartmud Terletzki, A. Kohlhase, 1997 .

Implementation of a WLR-program into a production line

A. Lill, M. Schneegans, A. Papp, 1995, IEEE 1995 International Integrated Reliability Workshop. Final Report.