National Chiao Tung University

Origin of defects responsible for charge transport in resistive random access memory based on hafnia

E. V. Ivanova, Novosibirsk, Russia., 2013, 1309.0071.

Percolation conductivity in hafnium sub-oxides

V. Gritsenko, D. Islamov, Novosibirsk State Technical University, 2014, 1412.4478.

Charge transport in amorphous Hf0.5Zr0.5O2

V. Gritsenko, T. Perevalov, Novosibirsk State Technical University, 2015, 1501.02370.