S. Doshi

Towards a better understanding of the operative mechanisms underlying impurity-free disordering of GaAs: Effect of stress

H. Tan, C. Jagadish, P. Deenapanray, 2003 .

Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

D. Macdonald, A. Cuevas, M. Conway, 2003 .

Atomic relocation processes in impurity-free disordered p -GaAs epilayers studied by deep level transient spectroscopy

H. Tan, C. Jagadish, P. Deenapanray, 2002 .