J. Iijima

Role of Interface Adhesion Strength in Interconnection Reliability

R. Kainuma, K. Neishi, J. Koike, 2007 .

Growth behavior of self-formed barrier at Cu–Mn∕SiO2 interface at 250–450°C

J. Koike, M. Haneda, J. Iijima, 2007 .

Cu Alloy Metallization for Self-Forming Barrier Process

M. Wada, J. Koike, M. Haneda, 2006, 2006 International Interconnect Technology Conference.

Native oxidation of ultra high purity Cu bulk and thin films

Shigeru Suzuki, S. H. Hong, K. Mimura, 2006 .

Growth kinetics and thermal stability of a self-formed barrier layer at Cu-Mn∕SiO2 interface

Junichi Koike, K. Neishi, J. Koike, 2007 .

Resistivity reduction by external oxidation of Cu–Mn alloy films for semiconductor interconnect application

K. Neishi, J. Koike, J. Iijima, 2009 .

Nanoscale investigation of long-term native oxidation of Cu films

K. Mimura, M. Isshiki, Jaewon Lim, 2008 .

Growth Behavior of Self-Formed Barrier Using Cu-Mn Alloys at 350 to 600oC

J. Koike, M. Haneda, J. Iijima, 2006, 2006 International Interconnect Technology Conference.