H. Schwob

发表

The Variation of the Carrier Recombination Region with Carrier Density in Anthracene Crystals

D. Weitz, D. Williams, H. Schwob, 1973 .

A new approach to double injection

I. Zschokke-gränacher, H. Schwob, 1972 .

Delayed Electroluminescence Quenching in Anthracene

D. Weitz, Digby F. Williams, L. Bradley, 1973 .

Charge transfer exciton fission in anthracene crystals

Digby F. Williams, H. Schwob, 1972 .

Dielectric tensor of anthracene as a function of temperature and pressure

Digby F. Williams, R. Munn, H. Schwob, 1973 .

Recombination radiation in anthracene doped with tetracene

E. Baldinger, I. Zschokke-gränacher, H. Schwob, 1967 .

Double injection in insulators: Theoretical description and analysis of some double‐injection experiments in anthracene crystals

Digby F. Williams, H. P. Schwob, H. Schwob, 1974 .

Recombination Radiation and Fluorescence in Doped Anthracene Crystal

I. Zschokke-gränacher, J. Fünfschilling, H. Schwob, 1970 .