Y. Sekiguchi

Electronic properties of pseudomorphic {InGaAs}/{AlGaAs} (on GaAs) and {InGaAs}/{InAlAs} (on InP) Modfet structures

J. East, Jasprit Singh, M. Jaffe, 1988 .

Preferential growth of cubic GaN on sapphire (0001) substrates by metal organic molecular beam epitaxy

H. Matsunami, J. Suda, M. Yoshimoto, 1998 .

Alternate doping of p-type and n-type impurities for AlGaInP selfaligned stepped substrate (S3) lasers

Masao Kondo, Akira Furuya, T. Fukushima, 1994 .