T. Nakakuma

Lowering of the Substrate Bias Voltage for Deposition of Cubic Boron Nitride in Microwave Plasma

S. Matsumoto, K. Teii, T. Nakakuma, 2019, IEEE Transactions on Plasma Science.

Advanced LSI embedded with FeRAM for contactless IC cards and its manufacturing technology

Tatsuo Otsuki, Eiji Fujii, Koji Arita, 1999 .

Leakage current characteristics of thick cubic boron nitride films deposited on titanium

S. Matsumoto, K. Teii, S. Kawamoto, 2017 .

A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure

S. Iwanari, H. Hirano, T. Nakakuma, 2005, IEEE Journal of Solid-State Circuits.