Chao-Kai Cheng

High-Ge-Content Si1–xGex Gate Stacks with Low-Temperature Deposited Ultrathin Epitaxial Si: Growth, Structures, Low Interfacial Traps, and Reliability

J. Kwo, M. Hong, Yi-Ting Cheng, 2022, ACS Applied Electronic Materials.

Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A

J. Kwo, M. Hong, Chia-Hung Hsu, 2017 .

Surface electronic structure of Si1−xGex(001)-2 × 1: a synchrotron radiation photoemission study

J. Kwo, M. Hong, Chiu-Ping Cheng, 2020, Applied Physics Express.

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

J. Kwo, M. Hong, Chia-Hung Hsu, 2020, Nanomaterials.

Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: electronic structure study via synchrotron radiation photoemission

J. Kwo, M. Hong, Chiu-Ping Cheng, 2020, Applied Physics Express.

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition

J. Kwo, M. Hong, Chia-Hung Hsu, 2019, Crystal Growth & Design.

In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge—a comparative study of the interfacial properties and reliability

J. Kwo, Yi-Ting Cheng, H. Wan, 2022, Japanese Journal of Applied Physics.

Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS

J. Kwo, M. Hong, Chia-Hung Hsu, 2021, ACS Applied Electronic Materials.

Low Dit of $(2-4)\times 10^{10}$ using Y2O3/epi-Si/Ge Gate Stacks

J. Kwo, T. Pi, Yi-Ting Cheng, 2023, 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).