V. Zhuo

CMOS compatible electrode materials selection in oxide-based memory devices

John Robertson, Yu Jiang, Yuzheng Guo, 2016 .

Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

Zheng Zhang, R. Zhao, T. Chong, 2013 .

Electrode effects on the current conduction mechanisms in TaOx-based RRAM

Y. Jiang, V. Zhuo, M. Li, 2015, 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Thermal stability investigation in highly- uniform and low-voltage tantalum oxide-based RRAM

V. Y.-Q Zhuo, J. Robertson, Y. Jiang, 2014, 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).

Investigation of resistive switching in bipolar TaOx-based resistive random access memory

R. Zhao, T. Chong, J. Robertson, 2013, 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings.