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Properties and device applications of hydrogenated amorphous silicon carbide films

Mahmudur Rahman, W. Stickle, Cary Y. Yang, 1990 .

A new power W-gated trench MOSFET (WMOSFET) with high switching performance

Ben Chan, Mohamed N. Darwish, Christina Yue, 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..

Study of Substrate Doping and Amorphous SiC:H/Crystalline Si Interface with a MIS Structure

Mahmudur Rahman, H. Inokawa, Cary Y. Yang, 1992 .

Analysis of the Amorphous Silicon Carbide/Crystalline Silicon Interface

Mahmudur Rahman, H. Inokawa, Cary Y. Yang, 1990 .