G. Brown

发表

Sources of resonance-related errors in capacitance versus voltage measurement systems

H. Huff, I. Polishchuk, G. Brown, 2000 .

Remote Plasma Nitridation of In-Situ Steam Generated (ISSG) Oxide

G. Miner, H. Huff, H. Alshareef, 2000 .

Vacuum deposition of amorphous selenium on polymeric substrates Part I: Preliminary evaluation using a dynamic coating device

G. Brown, D. A. Buckley, F. G. Belli, 1980 .

Differentiation between electric breakdowns and dielectric breakdown in thin silicon oxides

J. C. Jackson, O. Oralkan, D. Dumin, 1997 .

Electrical Characteristics of Silicon Nitride Films Prepared by Silane‐Ammonia Reaction

George A. Brown, W. Robinette, H. G. Carlson, 1968 .

Implications of Electronic and Ionic Conductivities of Polyimide Films in Integrated Circuit Fabrication

G. Brown, 1982 .

Plasma nitridation of very thin gate dielectrics

G. Bersuker, H. Huff, H. Alshareef, 2001 .

Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics

Byoung Hun Lee, Gennadi Bersuker, Peter Zeitzoff, 2004, Microelectron. Reliab..

Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance

Howard R. Huff, Byoung Hun Lee, Gennadi Bersuker, 2004 .

Voltage- and temperature-dependent gate capacitance and current model: application to ZrO/sub 2/ n-channel MOS capacitor

George A. Brown, L. Register, S. Banerjee, 2002 .

Electric breakdowns and breakdown mechanisms in ultra-thin silicon oxides

J. C. Jackson, O. Oralkan, D. Dumin, 1999 .

High-k gate stacks for planar, scaled CMOS integrated circuits

George A. Brown, G. Bersuker, P. Lysaght, 2003 .

Thickness optimization of the TiN metal gate with polysilicon-capping layer on Hf-based high-k dielectric

D. Kwong, G. Bersuker, B. Lee, 2006 .

Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films

Robert M. Wallace, George A. Brown, Daniel M. Fleetwood, 1998 .

Nonuniqueness of time-dependent-dielectric-breakdown distributions

George A. Brown, Omer Oralkan, J. C. Jackson, 1997 .

Scaling CMOS: Materials & devices

George A. Brown, G. Brown, 2004 .

Effect of H 2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO 2

Howard R. Huff, Husam N. Alshareef, George A. Brown, 2000 .

Extrapolation of high-voltage stress measurements to low-voltage operation for thin silicon-oxide films

George A. Brown, D. J. Dumin, D. Dumin, 1991 .

Spatial distributions of trapping centers in HfO2∕SiO2 gate stacks

Gennadi Bersuker, Eric M. Vogel, Alain C. Diebold, 2006 .