K. Okumura

Front- and Back-Interface Trap Densities and Subthreshold Swings of Fully Depleted Mode Metal-Oxide-Semiconductor Transistors Fabricated on Separation-by-Implanted-Oxygen Substrates

T. Ma, A. Yoshino, K. Okumura, 1998 .

TiN-capped TiSi2 formation in W/TiSi2 process for a quarter-micron complementary metal-oxide-semiconductor

K. Noguchi, M. Sekine, Y. Matsubara, 1994 .

Activation energy for the C49‐to‐C54 phase transition of polycrystalline TiSi2 films with arsenic impurities

T. Horiuchi, Y. Matsubara, K. Okumura, 1993 .

Activation Energy for the C49-TO-C54 Phase Transition of Polycrystalline TiSi 2 Films with under 30nm Thickness

K. Noguchi, Y. Matsubara, K. Okumura, 1993 .