T. Kunstmann

Relaxation of interfacial stress and improved quality of heteroepitaxial 3C–SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 °C

B. Meyer, S. Vepřek, D. Volm, 1997 .

Heteroepitaxy of β‐SiC from methyltrichlorosilane and methyltribromosilane on Si(100) without a carbon buffer layer

S. Vepřek, T. Kunstmann, 1995 .

NOVEL BROMINATED CARBOSILANE PRECURSORS FOR LOW-TEMPERATURE HETEROEPITAXY OF BETA-SIC AND THEIR COMPARISON WITH METHYLTRICHLOROSILANE

H. Angerer, S. Vepřek, H. Schmidbaur, 1995 .