H. W. Sang

Irrelevance of interface defects to heterojunction band offsets

R. S. Bauer, P. Chiaradia, A. Katnani, 1985 .

On the adjustability of the “abrupt” heterojunction band-gap discontinuity

R. S. Bauer, H. W. Sang, 1983 .

Core‐level photoemission study of MBE‐grown GaAs(111) and (100) surfaces

R. S. Bauer, P. Chiaradia, A. Katnani, 1985 .

Inequality of semiconductor heterojunction conduction‐band‐edge discontinuity and electron affinity difference

R. S. Bauer, P. Zurcher, H. W. Sang, 1983 .

Independence of Fermi-level position and valence-band edge discontinuity at GaAs-Ge(100) interfaces

R. S. Bauer, P. Chiaradia, A. Katnani, 1984 .

Reconstructions of the GaAS(100) Surface: Core-Level Photoemission Study

R. S. Bauer, A. Katnani, H. W. Sang, 1985 .