M. P. Yakubenya

发表

Interphase interaction at indium phosphide contacts with metals of group I

V. G. Bozhkov, K. V. Soldatenko, M. P. Yakubenya, 1986 .

Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy

Yu. G. Musikhin, N. Bert, V. Chaldyshev, 1999 .

Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy

V. Chaldyshev, V. Preobrazhenskii, M. D. Vilisova, 1998 .

Clusters and the Nature of Superconductivity in Ltmbe-GaAs

S. Kozyrev, N. Bert, V. Chaldyshev, 1993 .

Gallium arsenide grown by molecular beam epitaxy at low temperatures: crystal structure, properties, superconductivity

S. Kozyrev, A. Tybulewicz, V. Chaldyshev, 1993 .

Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief

G. A. Aleksandrova, I. V. Ivonin, A. Shubin, 1980 .

Structure and properties of epitaxial layers of InxGa1−xAs grown from the gas phase

M. D. Vilisova, I. A. Bobrovnikova, M. P. Yakubenya, 1992 .

Preparation and properties of epitaxial ZnGeP2 films

V. Voevodin, I. A. Bobrovnikova, M. P. Yakubenya, 1988 .

Effect of substrate orientation on growth rate and doping level of vapour grown GaAs. Interval (111)A—(100)—(111)B

M. P. Yakubenya, V. A. Moskovkin, Yu. G. Kataev, 1971 .

Effects of crystallization temperature on the growth and doping of autoepitaxial gallium arsenide films

Y. Rumyantsev, L. G. Lavrent’eva, I. Ivonin, 1973 .

Electron microscope investigation of the morphology of the etched surface of gallium arsenide

I. Ivonin, M. P. Yakubenya, L. M. Krasil'nikova, 1972 .