Qinghong Yang

Boron Impurity Deposition on a Si(100) Surface in a SiHCl3-BCl3-H2 System for Electronic-Grade Polysilicon Production

Lin Tian, G. Xie, Y. Hou, 2022, Minerals.

Pillar[6]arene Containing Multilayer Films: Reversible Uptake and Release of Guest Molecules with Methyl Viologen Moieties.

Xi Zhang, M. Schönhoff, Cai-Li Sun, 2016, ACS applied materials & interfaces.

Effects of alloy ambient on PdGe contacts on n-type GaAs

D. A. Ahmari, G. Stillman, M. Hattendorf, 1998 .

Precipitate formation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition

G. Stillman, J. Baker, D. Scott, 1999 .

Low-Pressure Metalorganic Chemical Vapor Deposition of High-Gain InGaP/GaAs Heterojunction Bipolar Transistors

Qinghong Yang, 1999 .

Heterointerface quality of InGaP–GaAs superlattices determined by photopumping, x-ray analysis, and transmission electron microscopy

G. Stillman, N. Holonyak, D. A. Kellogg, 1999 .