Hee-Deok Lee

A Study on the Corner Effect of Fin-type SONOS Flash Memory Using TCAD Simulation

Yu-Mi Kim, K. Jeong, H. Yun, 2012 .

Highly productive PCRAM technology platform and full chip operation: Based on 4F2 (84nm pitch) cell scheme for 1 Gb and beyond

K. S. Choi, S. H. Lee, H. C. Park, 2011, 2011 International Electron Devices Meeting.