Po‐Lun Chen

P‐34: Influences of Channel Deposition Conditions on Characteristics of Bottom‐Gate Oxide TFTs Adopting In‐Free Zinc‐Tin Oxides

Chung‐Chih Wu, Y. Kung, Cheng-Han Wu, 2010 .

Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

Shih-Ching Chen, Chun‐Hao Tu, Jiun-Jye Chang, 2010 .

Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

Po-Lun Chen, Tien-Yu Hsieh, Chih-Tsung Tsai, 2010 .

18.3: Additional Refresh Technology (ART) of Advanced‐MVA(AMVA) Mode for High Quality LCDs

Yi-Pai Huang, Po-Lun Chen, Wei-Kai Huang, 2007 .

Employ Present Five Masks Amorphous Silicon Thin-Film Transistor Design and Process Flow to Realize 5-in. InGaZnO Active-Matrix Liquid Crystal Display with Improved Stress Stability

Chun‐Hao Tu, Wei-Ting Lin, Jiun-Jye Chang, 2011 .