Sachie Fujikawa

Engaged in the Study of the Light and Electron Device

Sachie Fujikawa, 2014 .

222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template

Hideki Hirayama, Norihiko Kamata, Sachie Fujikawa, 2009, OPTO.

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Norihiko Kamata, Sachie Fujikawa, Hideki Hirayama, 2014 .

222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire

Norihiko Kamata, Sachie Fujikawa, Takayoshi Takano, 2009 .

Quaternary InAlGaN quantum‐dot ultraviolet light‐emitting diode emitting at 335 nm fabricated by anti‐surfactant method

Sachie Fujikawa, Hideki Hirayama, H. Hirayama, 2008 .

InSb-based HEMT with over 300 GHz-fT using evaporated SiOx film

Akifumi Kasamatsu, Issei Watanabe, Sachie Fujikawa, 2016, 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).

Improved electron transport properties of InSb quantum well structure using stepped buffer layer for strain reduction

Sachie Fujikawa, Hiroki I. Fujishiro, Tatsuya Taketsuru, 2015 .

284?300 nm Quaternary InAlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si(111) Substrates

Sachie Fujikawa, Hideki Hirayama, 2011 .