H.-K. Lin

An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier

J.B. Hacker, B. Brar, J. Bergman, 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

Small signal nonquasistatic models for GaAs field effect transistors for implementation in SPICE. II. Metal semiconductor field effect transistors (MESFETs)

H.-K. Lin, I. M. Abdel-Motaleb, 1991 .

E-beam-evaporated Al2O3 for InAs/AlSb metal–oxide–semiconductor HEMT development

Ping Li, Clement Hsingjen Wann, Wen-Chin Lee, 2010 .

Performance improvement of AlGaN/GaN HEMTs using two‐step silicon nitride passivation

Fan-Hsiu Huang, H.-K. Lin, Hsiang-Lin Yu, 2010 .

InAs/AlSb HFETs with f/sub /spl tau// and f/sub max/ above 150 GHz for low-power MMICs

Mark J. W. Rodwell, Arthur C. Gossard, Bobby Brar, 2003, International Conference onIndium Phosphide and Related Materials, 2003..

n/sup +/-InAs-InAlAs recess gate technology for InAs-channel millimeter-wave HFETs

B. Brar, G. Nagy, H.-K. Lin, 2005, IEEE Transactions on Electron Devices.