J. S. Ng

发表

Localization effects and band gap of GaAsBi alloys

J. David, S. Sweeney, R. Richards, 2014 .

Modelling results of avalanche multiplication in AlGaAs soft X-ray APDs

J. Lees, D. Bassford, C. Tan, 2011 .

InAs avalanche photodiodes as X-ray detectors

J. Lees, C. H. Tan, X. Zhou, 2015 .

Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

Y. L. Goh, Lionel J. J. Tan, J. David, 2012, Journal of Electronic Materials.

Al0.52In0.48P avalanche photodiodes for soft X-ray spectroscopy

R. C. Tozer, J. S. Cheong, A. Krysa, 2016 .

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

J. David, C. M. Johnson, S. Arthur, 2007 .

Determination of absorption coefficients in AlInP lattice matched to GaAs

J. S. Cheong, A. Krysa, J. David, 2015 .

Effects of dead space on breakdown probability in Geiger mode avalanche photodiode

J. David, G. Rees, C. H. Tan, 2007 .

Development of high temperature AlGaAs soft X-ray photon counting detectors

J. David, J. Lees, D. Bassford, 2011 .

Avalanche photodiodes beyond 1.65 μm

Chee Hing Tan, Jo Shien Ng, J.P.R. David, 2009, Defense + Commercial Sensing.

GaAs/Al0.8Ga0.2As avalanche photodiodes for soft X-ray spectroscopy

C. Tan, J. David, J. S. Ng, 2014 .

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

B. K. Ng, J. David, C. M. Johnson, 2009 .

Design of high sensitivity detector for underwater communication system

Andrey B. Krysa, John P. R. David, Jo Shien Ng, 2013, Optics/Photonics in Security and Defence.