P. Cooke

Positron annihilation studies of defects in molecular beam epitaxy grown III–V layers

K. Lynn, D. Keeble, P. Asoka-kumar, 1995 .

Annealing of low‐temperature GaAs studied using a variable energy positron beam

K. Lynn, D. Keeble, P. Asoka-kumar, 1993 .

Raman characterization of GaAs/InGaP heterostructure bipolar transistor

E. Armour, R. Stall, S.Z. Sun, 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).

Magnetron‐enhanced reactive ion etching of GaAs and AlGaAs using CH4/H2/Ar

M. Meyyappan, M. Cole, G. Mclane, 1993 .

Femtosecond optical response of low temperature grown In0.53Ga0.47As

B. C. Tousley, P. Fauchet, A. Lobad, 1993 .