T. Henry

Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition

S. Denbaars, S. Nakamura, J. Speck, 2012 .

The influence of Al composition on point defect incorporation in AlGaN

A. Allerman, M. Crawford, A. Armstrong, 2012 .

Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes

Daniel D. Koleske, Mary H. Crawford, Karl R. Westlake, 2012 .

Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes.

S. R. Lee, M. Crawford, D. Koleske, 2012, Optics express.

Optimization of ion-beam-deposited Mo/Si multilayers for extreme ultraviolet masks

Kenji Yamamoto, Katrina Rook, Narasimhan Srinivasan, 2021 .

Process optimization for performance improvement in Mo/Si multilayers for EUV mask blanks

Narasimhan Srinivasan, Katrina Rook, Tania Henry, 2020, Photomask Technology.