M. Finke

Experimental Analysis of the Spontaneous Polarization Field in GaN by UHV-cathodoluminescence

A. Hangleiter, D. Fuhrmann, U. Rossow, 2006 .

Investigation of TE and TM polarised laser emission in GaInP/AlGaInP lasers by growth-controlled strain

A. Valster, S. H. Hagen, M. Boermans, 1990 .

Effect of strain on the threshold current of GaInP/AlGaInP quantum well lasers emitting at 633 nm

C. van der Poel, A. Valster, M. Boermans, 1992, 13th IEEE International Semiconductor Laser Conference.

High quality AlxGa1-x-yInyP alloys grown by MOVPE on (311)B GaAs substrates

C. Bulle-lieuwma, A. Valster, C. Liedenbaum, 1991 .

Low threshold current density (760 A/cm/sup 2/) and high power (45 mW) operation of strained Ga/sub 0.42/In/sub 0.58/P multiquantum well laser diodes emitting at 632 nm

Adriaan Valster, A. Valster, C. J. Poel, 1992 .

High-power low threshold operation of GaInP/AlGaInP strained MQW index guided visible laser diodes.

A. Valster, C. J. Poel, M. Boermans, 1992 .

633 nm CW operation of GaInP/AlGaInP laser-diodes

A. Valster, C. Liedenbaum, M. Boermans, 1990, Workshop on Learning from Authoritative Security Experiment Results.