M. Staedele

Optical excitations of Si by time‐dependent density functional theory based on exact‐exchange Kohn–Sham band structure

Yong‐Hoon Kim, M. Staedele, Andreas Goerling Theoretische Chemie, 2002, cond-mat/0202214.

Influence of Source-drain Tunneling on the Subthreshold Behavior of sub-10nm Double-gate MOSFETs

M. Staedele, 2002, 32nd European Solid-State Device Research Conference.

Modeling electronics at the nanoscale

N. Aluru, J. Leburton, K. Hess, 2002 .