T. Yatabe

Development of 230–270 nm AlGaN‐based deep‐UV LEDs

H. Hirayama, N. Kamata, T. Yatabe, 2010 .

226–273 nm AlGaN deep‐ultraviolet light‐emitting diodes fabricated on multilayer AlN buffers on sapphire

H. Hirayama, N. Kamata, N. Noguchi, 2008 .

227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density

H. Hirayama, N. Kamata, N. Noguchi, 2008 .

Remarkable enhancement of 254‐280 nm deep ultraviolet emission from AlGaN quantum wells by using high‐quality AlN buffer on sapphire

H. Hirayama, N. Kamata, Tomoaki Ohashi, 2008 .

Development of 230-270 nm AlGaN-Based Deep UV LEDs

H. Hirayama, N. Kamata, T. Yatabe, 2008 .

231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

Tomoaki Ohashi, Norihiko Kamata, Norimichi Noguchi, 2007 .