Hongning Yang

Power performance optimization of a new smart power IC technology targeted for 42V automotive electrical system and high-power applications

Young Sir Chung, Jiang-Kai Zuo, V. Macary, 2002, Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics.

Approach to the silicon limit: Advanced NLDMOS in 0.13 μm SOI technology for automotive and industrial applications up to 110V

Pete Rodriquez, Zhihong Zhang, Jiangkai Zuo, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Low-Leakage SMARTMOS 10W Technology At 0.13μm Node with Optimized Analog, Power and Logic Devices for SOC Design

Zhihong Zhang, Won-Gi Min, Hongning Yang, 2008, 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Current mismatch due to local dopant fluctuations in MOSFET channel

V. Macary, Hongning Yang, B. Baird, 2003 .