K. Takemura

Annealing temperature dependence of SAB based Si/Si junctions

N. Shigekawa, S. Nishida, M. Morimoto, 2014, 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).

An ECR MOCVD (Ba,Sr)TiO/sub 3/ based stacked capacitor technology with RuO/sub 2//Ru/TiN/TiSi/sub x/ storage nodes for Gbit-scale DRAMs

S. Ohnishi, K. Nakajima, H. Yabuta, 1995, Proceedings of International Electron Devices Meeting.

A Gbit-scale DRAM stacked capacitor technology with ECR MOCVD SrTiO/sub 3/ and RIE patterned RuO/sub 2/TiN storage nodes

T. Sakuma, K. Shibahara, S. Ohnishi, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.