P. Godignon

发表

Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates

N. Camara, A. Tiberj, J. Camassel, 2011, Nanoscale research letters.

Small signal thermal analysis of local multibarrier behaviour in SiC Schottky diodes

X. Jordà, M. Vellvehí, M. Berthou, 2014 .

Structural analysis of SiC Schottky diodes failure mechanism under current overload

X. Jordà, M. Vellvehí, M. Berthou, 2014 .

Technical aspects of 〈$ \bf 11\bar 20 $〉 4H–SiC MOSFET processing

D. Tournier, Y. Monteil, S. Juillaguet, 2005 .

Deep level study of chlorine-based dry etched β − Ga2O3

J. Varley, L. Vines, G. Alfieri, 2021, Journal of Applied Physics.

Barrier inhomogeneities and electrical characteristics of Ni/Ti bilayer Schottky contacts on 4H–SiC after high temperature treatments

N. Mestres, D. Tournier, J. Montserrat, 2005 .

10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: electrical characterization and gamma irradiation effects

J. M. Rafí, D. Quirion, S. Hidalgo, 2017 .

Quantum Hall effect of self-organized graphene monolayers on the C-face of 6H-SiC

N. Camara, C. Conséjo, B. Jouault, 2014 .

Performance of neutron-irradiated 4H-silicon carbide diodes subjected to alpha radiation

J. M. Rafí, T. Bergauer, G. Pellegrini, 2022, Journal of Instrumentation.

Full wafer size investigation of N+ and P+ co‐implanted layers in 4H–SiC

N. Mestres, J. Lyonnet, J. Pascual, 2005 .

Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding

X. Jordà, M. Vellvehí, X. Perpiñà, 2022, IEEE Electron Device Letters.

Al-implanted on-axis 4H-SiC MOSFETs

P. Godignon, A. Henry, M. Florentin, 2017 .