U. Jeong

Effects of pre-amorphization on junction characteristics and damage behavior in low energy boron implantation

S. Mehta, Jinning Liu, U. Jeong, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

Study of reverse annealing behaviors of p+/n ultrashallow junction formed using solid phase epitaxial annealing

S. Mehta, Jinning Liu, K. Jones, 2002 .

Charge control in a ribbon beam high current ion implanter

S. Walther, G. Angel, U. Jeong, 1999, 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).

Formation of extremely shallow junctions for sub-90 nm devices

D. Lenoble, S. Mehta, S. Walther, 2004 .

Investigation of indium activation by C-V measurement

J. Lim, A. Lo, Jinning Liu, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

Analysis of the accuracy of several methods for determining the concentration of 11B+ implanted silicon

J. L. Duggan, O. W. Holland, Jun Liu, 2006 .

Channeling Doping Profiles Studies for Small Incident Angle Implantation into Silicon Wafers

S. Mehta, B. Guo, N. Variam, 2003 .