X. Guggenmos

Test structures and testing methods for electrostatic discharge: results of PROPHECY project

Gaudenzio Meneghesso, Paolo Pavan, Enrico Zanoni, 1999 .

Advanced 2D/3D ESD device simulation-a powerful tool already used in a pre-Si phase

Wolfgang Fichtner, Harald Gossner, Kai Esmark, 2000 .

Advanced 2D/3D ESD device simulation-a powerful tool already used in a pre-Si phase

Wolfgang Fichtner, Wolfgang Stadler, Kai Esmark, 2001, Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476).

A new ESD protection concept for VLSI CMOS circuits avoiding circuit stress

R. Holzner, X. Guggenmos, 1992 .

Reproducibility of field failures by ESD models - comparison of HBM, socketed CDM and non-socketed CDM

R. Wagner, X. Guggenmos, H. Bauch, 1996 .

Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS transistors

X. Guggenmos, Heinrich Wolf, C. Musshoff, 1996 .

Does The Esd-failure Current Obtained By Transmissionline Pulsing Always Correlate To Human Body Model Tests?

X. Guggenmos, C. Musshoff, P. Egger, 1997, Proceedings Electrical Overstress/Electrostatic Discharge Symposium.

Risetime effects of HBM and square pulses on the failure thresholds of GGNMOS transistors

H. Wolf, X. Guggenmos, C. Musshoff, 1996, Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis.

MOS-Degradation in Input and Output Stages of VLSI-CMOS-Circuits Due to Electrostatic Discharge

X. Guggenmos, 1988, ESSDERC '88: 18th European Solid State Device Research Conference.