R. Liu

Molecular carbon implant technology for ultra-shallow junction formation and n-MOSFET strain application in a 40nm node logic device

M. Ameen, D. Tieger, J. Shiu, 2009, 2009 International Workshop on Junction Technology.

Alleviating eSiGe Strain Relaxation Using Cryo-Implantation

C. I. Li, J. Y. Wu, B. Colombeau, 2011 .

Mitigating eSiGe strain relaxation using cryo-implantation technology for PSD formation

C. I. Li, J. Y. Wu, I. Chen, 2011, 11th International Workshop on Junction Technology (IWJT).