M. Chan

Molecular carbon implant technology for ultra-shallow junction formation and n-MOSFET strain application in a 40nm node logic device

M. Ameen, D. Tieger, J. Shiu, 2009, 2009 International Workshop on Junction Technology.

A novel hydrogen rich interfacial layer to downscale high-K dielectrics

J. Y. Wu, M. Chan, S. Wang, 2010, International Conference on Advanced Thermal Processing of Semiconductors.

Alleviating eSiGe Strain Relaxation Using Cryo-Implantation

C. I. Li, J. Y. Wu, B. Colombeau, 2011 .

Optimizing state-of-the-art 28nm core/SRAM device performance by cryo-implantation technology

T. Y. Lu, C. I. Li, Y. S. Huang, 2012, Proceedings of Technical Program of 2012 VLSI Technology, System and Application.

Mitigating eSiGe strain relaxation using cryo-implantation technology for PSD formation

C. I. Li, J. Y. Wu, I. Chen, 2011, 11th International Workshop on Junction Technology (IWJT).