Seita Miyoshi

InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography

K. Yamane, N. Okada, K. Tadatomo, 2013 .

Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiOxNy

K. Yamane, N. Okada, K. Tadatomo, 2012 .

Green light‐emitting diodes fabricated on semipolar (11–22) GaN on r‐plane patterned sapphire substrate

N. Okada, K. Tadatomo, Seita Miyoshi, 2012 .