B. Krishnan

发表

High Temperature MOVPE Growth of Al x Ga 1−x N (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices

S. Kamiyama, H. Amano, I. Akasaki, 2006 .

Fabless design approach for lateral optimization of low voltage GaN power HEMTs

Jiann-Shiun Yuan, P. Shea, A. Binder, 2018, Superlattices and Microstructures.

Growth of AlxGa1−xN Structures on 8 in. Si(111) Substrates

A. Paranjpe, Hongwei Li, Seungjae Lee, 2013 .

EFFECT OF EGR ON COMBUSTION AND EMISSION CHARACTERISTICS IN DIESEL BIOETHANOL DUAL-FUEL ENGINE

H. G. How, Hishammudin Afifi Huspi, Y. Teoh, 2022, ASEAN Engineering Journal.

Robust 290 nm Emission Light Emitting Diodes over Pulsed Laterally Overgrown AlN

Monirul Islam, Asif Khan, Thomas M. Katona, 2007 .

Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor

E. Armour, Jie Su, Balakrishnan Krishnan, 2015 .

Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers

E. Armour, Jie Su, Balakrishnan Krishnan, 2014 .

Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

H. P. Lee, A. Paranjpe, D. Sadana, 2017 .

Low-Side GaN Power Device Dynamic Ron Characteristics Under Different Substrate Biases

Patrick Shea, Jiann-Shiun Yuan, Balakrishnan Krishnan, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Dislocation reduction in high Al‐content AlGaN films for deep ultraviolet light emitting diodes

Asif Khan, Bin Zhang, Balakrishnan Krishnan, 2011 .

Characterization of Deep and Shallow Traps in GaN HEMT Using Multi-Frequency C-V Measurement and Pulse-Mode Voltage Stress

Jiann-Shiun Yuan, P. Shea, Balakrishnan Krishnan, 2019, IEEE Transactions on Device and Materials Reliability.

Switching Loss Characterization of GaN-based Buck Converter under Different Substrate Biases

Jiann-Shiun Yuan, Wen Yang, B. Krishnan, 2019, 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).