Junichi Murota

发表

X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures

Seiichi Miyazaki, Katsunori Makihara, Masao Sakuraba, 2013, IEICE Trans. Electron..

LSI implementation of pulse-output neural network with programmable synapse

Shigeo Sato, Koji Nakajima, Yasuji Sawada, 1992, [Proceedings 1992] IJCNN International Joint Conference on Neural Networks.

Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications

Shinya Morita, Shun'ichiro Ohmi, Masao Sakuraba, 2005, IEICE Trans. Electron..

CVD Si1-xGex epitaxial growth and its applications to MOS devices

Masao Sakuraba, Junichi Murota, Takashi Matsuura, 1999, Advanced Lithography.

Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices(Session 1 Silicon Devices I,AWAD2006)

Masao Sakuraba, Toshiaki Tsuchiya, Junichi Murota, 2006 .

Low-Frequency Noise in Si1-xGexp-Channel Metal Oxide Semiconductor Field-Effect Transistors

Toshiaki Tsuchiya, Junichi Murota, Takashi Matsuura, 2001 .

Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment

Tadahiro Ohmi, Manabu Kato, Nobuo Mikoshiba, 1989 .

Perfect-Selectivity Directional Etching of Silicon Using Ultraclean ECR Plasma

Tadahiro Ohmi, Hiroaki Uetake, Nobuo Mikoshiba, 1989 .

Selective germanium epitaxial growth on silicon using CVD technology with ultra-pure gases

Junichi Murota, Armin Kohlhase, J. Murota, 1990 .

Integration of Si p–i–n diodes for light emitter and detector with optical waveguides

Masao Sakuraba, Junichi Murota, M. Sakuraba, 2005 .

Anisotropic etching of n+ polycrystalline silicon with high selectivity using a chlorine and nitrogen plasma in an ultraclean electron cyclotron resonance etcher

Tadahiro Ohmi, Hiroaki Uetake, Nobuo Mikoshiba, 1990 .

Trench Coverage Characteristics of Polysilicon Deposited by Thermal Decomposition of Silane

Takashi Morie, Junichi Murota, T. Morie, 1984 .

Directional etching of Si with perfect selectivity to SiO2 using an ultraclean electron cyclotron resonance plasma

Tadahiro Ohmi, Hiroaki Uetake, Nobuo Mikoshiba, 1990 .

Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy

Mathieu Stoffel, Philippe Boucaud, Junichi Murota, 2013 .

High-mobility strained-Si PMOSFET's

Junichi Murota, Yasuhiro Shiraki, Y. Shiraki, 1996 .

Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs

Masao Sakuraba, Toshiaki Tsuchiya, Junichi Murota, 2006 .

Stepped Electrode Transistor: SET

Junichi Murota, Tetsushi Sakai, Yoshio Sunohara, 1977 .