Xavier Jehl

发表

Introducing Joint Research Project «Quantum Ampere» for the realisation of the new SI ampere

François Piquemal, Hansjörg Scherer, Stephen P. Giblin, 2014 .

SOI CMOS technology for quantum information processing

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2017, 2017 IEEE International Conference on IC Design and Technology (ICICDT).

The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire

Romain Wacquez, Maud Vinet, Marc Sanquer, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices' Variability?

Romain Wacquez, D. Kern, Marc Sanquer, 2011, FET.

Progress on single-electron transistors

Marc Sanquer, Xavier Jehl, 2010, 2010 IEEE International Conference on Integrated Circuit Design and Technology.

Plenary) The Future of Heterogeneous and Diversified ULSI Nanoelectronics

Maud Vinet, F. Andrieu, Simon Deleonibus, 2013 .

Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities

Romain Wacquez, Maud Vinet, Marc Sanquer, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

MOS technology for quantum computing: recent progress and perspectives for scaling up

Maud Vinet, Mikaël Casse, Gérard Billiot, 2021, 2021 Device Research Conference (DRC).

High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

S. Barraud, Quentin Wilmart, Xavier Jehl, 2014 .

Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature.

Jing Li, Marc Sanquer, Sylvain Barraud, 2015, Nano letters (Print).

Direct detection of a transport-blocking trap in a nanoscaled silicon single-electron transistor by radio-frequency reflectometry

Maud Vinet, Sylvain Barraud, Patrick Fay, 2014 .

Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits.

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2017, Physical review letters.

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2017, 1708.02903.

Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire

Romain Wacquez, Maud Vinet, Marc Sanquer, 2011 .

Gate-based high fidelity spin readout in a CMOS device

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2018, Nature Nanotechnology.

Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry.

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2016, Nano letters.

Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor.

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2014, Nano letters.

Compact silicon double and triple dots realized with only two gates

Romain Wacquez, Maud Vinet, Marc Sanquer, 2009, 1005.5686.

Towards the limits of conventional MOSFETs: case of sub 30 nm NMOS devices

G. Guegan, Marc Sanquer, S. Deleonibus, 2004 .

Controlled single-electron effects in nonoverlapped ultra-short silicon field effect transistors

Frederic Boeuf, Marc Sanquer, T. Skotnicki, 2003 .

Few electron limit of n-type metal oxide semiconductor single electron transistors

Romain Wacquez, Maud Vinet, Marc Sanquer, 2012, Nanotechnology.

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Maud Vinet, Marc Sanquer, Sylvain Barraud, 2018, IEEE Transactions on Electron Devices.