F. Iwase

Molecular-beam-epitaxy growth of strained Ga1−x InxAs/AlInAs/InP and application to 1.55 μm multi-quantum-well lasers

H. Shimizu, M. Irikawa, Y. Hirayama, 1995 .

Secondary electron emission from Si‐implanted GaAs

Y. Nakamura, S. Furuya, F. Iwase, 1994 .

SIMS analysis of a multiple quantum well structure in a vertical cavity surface emitting laser using the mixing-roughness-information depth model

S. Ootomo, S. Seo, F. Iwase, 2006 .

Mapping of dopant concentration in a GaAs semiconductor by off-axis phase-shifting electron holography

T. Hirayama, T. Hirayama, S. Ootomo, 2006 .

Enhancement of secondary electron emission from heavily Si-implanted and Si-doped GaAs

Y. Nakamura, F. Iwase, 1997 .

Specimen preparation for high-resolution transmission electron microscopy using focused ion beam and Ar ion milling.

T. Saitoh, Y. Iijima, Y. Shiohara, 2004, Journal of Electron Microscopy.

TEM specimen preparation technique for III–V semiconductor devices by using a novel FIB-Ar ion milling method

K. Tanabe, H. Sasaki, T. Matsuda, 2005 .