Z. Zhong

发表

Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films

J. Zhao, Jing Zhao, Lianwei Peng, 1993 .

Effects of vacuum annealing on the electronic properties of cleaved GaAs

F. Proix, A. Akremi, Z. Zhong, 1983 .

Interfacial formation process and reactions between Au and hydrogenated amorphous Si studied by XPS and AES

X. Liao, Y. Fan, Z. Zhong, 1991 .

Surface science lettersPhotoemission study of the interfacial formation process and reactions between Al and hydrogenated amorphous Si

X. Liao, Y. Fan, Z. Zhong, 1991 .

Photoemission study of the interfacial formation process and reactions between Al and hydrogenated amorphous Si

X. Liao, Y. Fan, Z. Zhong, 1991 .

Intrasubband and intersubband transitions in lightly and heavily doped GaAs/AlGa1-xAs multiple quantum wells

Xiaoying Zhou, Zi-Yu Cao, G. Zhang, 1998 .

Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate

Z. Jiang, X. J. Yang, Y. J. Ma, 2013, Nanotechnology.

Determination of the sub-band energy in the V-shaped potential well of δ -doped GaAs by deep level transient spectroscopy

L. Lu, C. F. Li, Z. Zhong, 1994 .

Atom diffusion during MBE growth on patterned substrate

Joe X. Zhou, Chua Soo-Jin, J. Jian, 1998 .

A REM study of inhomogeneous stress fields induced by the interfacial steps at In0.2Ga0.8As/GaAs interface

E. Wang, L. Peng, A. Du, 1993 .

The passivating effect of Si(100)–As surface and the adsorption of oxygen

Deli Wang, Z. Zhong, C. Li, 1989 .

Determination of the conduction‐band offset of a single AlGaAs barrier layer using deep level transient spectroscopy

Xiaoping Zhou, Z. Zhong, S. Mou, 1993 .