A. Hirano

Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors

H. Ohmi, H. Kakiuchi, K. Yasutake, 2013 .

Study on the Growth of Microcrystalline Silicon Films in Atmospheric-Pressure VHF Plasma Using Porous Carbon Electrode

H. Ohmi, H. Kakiuchi, K. Yasutake, 2013 .

Field Ion Studies of Structure of GP Zones

K. Hono, A. Hirano, 1988 .

Gate-First Processed FUSI/HfO2/HfSiOx/Si MOSFETs with EOT=0.5 nm - Interfacial Layer Formation by Cycle-by-Cycle Deposition and Annealing

T. Nabatame, A. Toriumi, S. Migita, 2007, 2007 IEEE International Electron Devices Meeting.

Intrinsic Origin of Electron Mobility Reduction in High-k MOSFETs - From Remote Phonon to Bottom Interface Dipole Scattering

T. Nabatame, A. Toriumi, S. Migita, 2007, 2007 IEEE International Electron Devices Meeting.

Roles of high-k and interfacial layers on TDDB reliability studied with HfAlOX/SiO2 stacked gate dielectrics

T. Nabatame, A. Toriumi, H. Ota, 2008, 2008 IEEE International Reliability Physics Symposium.