M. Rottersman

Graded p-n Junctions in Thin Anodic Oxide Films of Titanium

F. Huber, M. Rottersman, 1962 .

Properties of Low Anodization Voltage Thin-Film Capacitors Based on alpha -Ta with Nitrogen Concentrations Between 14 and 30 Atomic Percent

M. Rottersman, R. Pitetti, M. Bill, 1980 .

Properties of planar-magnetron-sputtered tantalum films

M. Rottersman, M. Bill, 1979 .

Tantalum Film Capacitors with Improved AC Properties

D. Gerstenberg, M. Rottersman, M. Bill, 1978 .