Apoorva Sood

Ion implantation effects on the characteristics of β-Ga2O3 epilayers grown on sapphire by MOCVD

R. Horng, D. Wuu, C. Hsiao, 2022, Ceramics International.

Performance enhancement of ZnGa2O4 Schottky type deep-ultraviolet photodetectors by oxygen supercritical fluid treatment

R. Horng, Po-Liang Liu, Yu‐Xuan Wang, 2021 .

GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

R. Horng, Po-Liang Liu, Y. Kao, 2021, Crystals.

Growth mechanism and characteristics of β-Ga2O3 heteroepitaxailly grown on sapphire by metalorganic chemical vapor deposition

R. Horng, D. Wuu, Po-Liang Liu, 2022, Materials Today Advances.

Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates

H. Kuo, R. Horng, D. Wuu, 2023, Materials Today Advances.

Metal-insulator-semiconductor type diode based on implanted β-Ga2O3 epilayers grown on sapphire substrate by metalorganic chemical vapor deposition

H. Kuo, R. Horng, J. P. Singh, 2023, Materials Today Advances.