F. Taiariol

On the location of the misfit dislocations in InGaAs/InP mbe single heterostructures

G. Salviati, P. Franzosi, A. Stano, 1985 .

Properties of r.f. sputtered niobium thin films for metrological applications

E. Monticone, V. Lacquaniti, D. Andreone, 1993 .

Inclusion-like defects in InP substrates and related defects in heteroepitaxial and Zn diffused layers

G. Salviati, M. Scaffardi, R. Audino, 1988 .

Misfit dislocations in InGaAs/InP mbe single heterostructures

G. Salviati, P. Franzosi, A. Stano, 1986 .

Different fluorination processes with ammonium bifluoride and their effect on fluorozirconate glasses

M. Ferraris, M. Braglia, F. Taiariol, 1989 .

Environmental effects on surface devitrification of fluorozirconate glasses

M. Ferraris, M. Braglia, G. Cocito, 1990 .

Fluorozirconate Glasses: Study on Different Fluorination Processes with Ammonium Bifluoride

M. Ferraris, M. Braglia, F. Taiariol, 1991 .

Lpe highly perfect ingaasp/lnp structure characterization by x-ray double crystal diffractometry

S. Pellegrino, C. Ferrari, C. Bocchi, 1987 .

Inclusion-like defects in Czochralski grown InP single crystals

G. Salviati, C. Ghezzi, P. Franzosi, 1984 .

InGaAs/InGaAs tensile-strained-barrier MQW structures for optical amplifiers

A. Piccirillo, F. Taiariol, P. Cinguino, 1996, Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

Characterization of thin Al2O3 films on InP substrates by X-ray topography

M. Scaffardi, S. Tamagno, P. Franzosi, 1987 .

Life cycle assessment of an integrated circuit product

F. Taiariol, P. Fea, C. Papuzza, 2001, Proceedings of the 2001 IEEE International Symposium on Electronics and the Environment. 2001 IEEE ISEE (Cat. No.01CH37190).