R. Lal

Single-event-induced barrier lowering in deep-submicron MOS devices and circuits

P. Jain, J. Vasi, R. Lal, 2004, Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743).

Low-cost RF spectrum analyser

M. Govindarajan, R. Lal, M. Srinivasa Rao, 1996, 1996 IEEE International Conference on Personal Wireless Communications Proceedings and Exhibition. Future Access.

Field acceleration factor for dielectric breakdown of MOS devices

Rajendra Patrikar, R. Lal, 1989 .

Macroporous silicon based capacitive affinity sensor—fabrication and electrochemical studies

R. Lal, J. V. Yakhmi, Chirayath A. Betty, 2004 .