C. V. Es

发表

CH 4 / H 2 / Ar electron cyclotron resonance plasma etching for GaAs-based field effect transistors

J. Hassel, P. Nouwens, L. Kaufmann, 2005 .

Optical verification of the valence band structure of cadmium arsenide

F. Blom, J. Jongeneelen, C. V. Es, 1980 .

Landau levels in anisotropic (Cd1-xMnx)3As2 alloys

J. J. Neve, J. Kossut, F. Blom, 1982 .

Investigations on indium phosphide grown by chemical beam epitaxy

M. Leys, J. H. Wolter, H. Vonk, 1995 .

Interface manipulation in GaxIn1-xAs/InP multiple layer structures grown by chemical beam epitaxy

M. Leys, J. Wolter, H. Vonk, 1997 .

Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching

Tj Tom Eijkemans, J. Wolter, M. Rossum, 1993 .

Influence of CH4/H2 reactive ion etching on electrical and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures

Tj Tom Eijkemans, J. Wolter, M. Rossum, 1995 .

Damage Introduced by Chdamage Introduced by CH 4 /H 2 Reactive Ion Etching in Pseudomorphic AlGaAs/InGaAs MODFETs

M. V. Hove, C. Hoof, M. Rossum, 1991 .