O. Couturaud

Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology

A. Michon, C. Conséjo, B. Jouault, 2015, 1504.06511.

Puddle-Induced Resistance Oscillations in the Breakdown of the Graphene Quantum Hall Effect.

R. Yakimova, M. Goiran, A. Cresti, 2016, Physical review letters.

Ballistic effects up to room temperature in microscopic Hall sensors

D. Mailly, V. Mosser, S. Contreras, 2009 .

A universal law to characterize ohmic contacts of small high electron mobility transistors

D. Mailly, C. Chaubet, O. Couturaud, 2011 .

Tunneling accross mesoscopic Hall bars

D. Mailly, C. Chaubet, O. Couturaud, 2009 .

Local spectroscopy of Landau levels in mesoscopic Hall bars

D. Mailly, C. Chaubet, B. Jouault, 2009 .

Quantum Hall resistance standard in graphene devices under relaxed experimental conditions.

A. Michon, C. Conséjo, B. Jouault, 2015, Nature nanotechnology.

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

T. Chassagne, M. Portail, A. Michon, 2014, Nature Communications.

Landau levels analysis by using symmetry properties of mesoscopic Hall bars

D. Mailly, C. Chaubet, B. Jouault, 2007 .

Convenient graphene-based quantum Hall resistance standards

C. Conséjo, W. Poirier, F. Schopfer, 2016, 2016 Conference on Precision Electromagnetic Measurements (CPEM 2016).